This article is cited in 6 papers

LEDs based on InGaAs/GaAs heterostructures with magnetically controlled electroluminescence

A. V. Kudrin, M. V. Dorokhin, Yu. A. Danilov, E. I. Malysheva

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: A $p$–$i$–$n$ light-emitting diode (LED) structure with an InGaAs/GaAs quantum well and a ferromagnetic GaMnAs layer as p-type semiconductor has been manufactured and investigated. An external magnetic field induces a decrease (up to $\sim$5% in a magnetic field of 3600 Oe at T = 10 K) in the GaMnAs layer resistance. In the voltage source regime, a change in this resistance leads to an increase in the intensity of electroluminescence of the given LED structure. This effect is due to ferromagnetism of the GaMnAs layer and vanishes at temperatures above the Curie point of this layer.

Received: 14.07.2011

 English version: Technical Physics Letters, 2011, 37:12, 1168–1171

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