A. G. Gladyshev, M. M. Kulagina, S. A. Blokhin, A. A. Krasivichev, L. Ya. Karachinsky, A. P. Vasil'ev, N. A. Maleev, V. M. Ustinov, “Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 37, Issue 24,Pages <nobr>9

Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers

A. G. Gladyshev^ab, M. M. Kulagina^ab, S. A. Blokhin^ab, A. A. Krasivichev^ab, L. Ya. Karachinsky^ab, A. P. Vasil'ev^ab, N. A. Maleev^ab, V. M. Ustinov^ab

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)

Abstract: Basic technology for the fabrication of submicron surface reliefs in epitaxial GaAs structures with thin AlGaAs stop layers has been developed using electron-beam lithography. High sensitivity of the characteristics of vertical-cavity surface-emitting lasers (VCSELs) with respect to the level of optical losses allows this technology to be used for controlling the mode composition and stabilizing the polarization of VCSEL radiation.

Received: 24.06.2011