Forward-current-generated donor centers in high-voltage 4H-SiC based $p$–$i$–$n$ diodes

A. M. Ivanov^a, M. E. Levinshteĭn^a, J. W. Palmour^b, A. K. Agarwal^b, М. К. Das<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Cree Inc., 4600 Silicon Dr., Durham NC 27703, USA

Abstract: High-voltage diodes based on silicon carbide of 4H polytype (4H-SiC) have been studied by the deep-level transient spectroscopy (DLTS) method. It is established that the passage of forward current leads to the activation of a donor center with an activation energy of $E_c$ – 0.2 eV and an electron capture cross section of $\sigma_n\sim$ 2.0 $\times$ 10$^{-15}$ cm$^2$. The DLTS measurements reveal the appearance of this center upon the transfer of a very small charge through the diode, under the conditions where the forward voltage drop on the diode remains almost unchanged. A possible nature of the observed phenomenon is discussed.

Received: 07.05.2011

 English version: Technical Physics Letters, 2011, 37:10, 911–913

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