This article is cited in 1 paper

Method of selective doping of silicon by segregating impurities

D. V. Yurasov, M. N. Drozdov, A. V. Murel, A. V. Novikov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: An original method for the controlled doping of silicon by segregating donor impurities is proposed. The approach is based on a rapid variation of the growth temperature during the molecular beam epitaxy between the regimes of kinetically limited segregation and maximum segregation of the dopant. By example of antimony, it is demonstrated that the proposed method can be used to obtain several-nanometer-thick selectively Sb-doped Si epilayers, in which a tenfold change in the volume concentration of the dopant is achieved on a 2–3 nm scale.

Received: 02.05.2011

 English version: Technical Physics Letters, 2011, 37:9, 824–826

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