Specific features of technology of electron irradiation of large-area $p$–$n$ silicon structures

I. G. Marchenko, N. E. Zhdanovich

Scientific-Practical Materials Research Centre of NAS of Belarus

Abstract: We have studied the influence of irradiation by 4-MeV electrons via flat metal screens on the main electrical characteristics of high-power silicon diodes intended to operate at currents up to 600 A. The electron irradiation was performed via metal masks, which led to the formation of enhanced recombination zones (ERZs) in the base region of $p^+$–$n$–$n^+$ silicon structures. It is shown that the local irradiation of a large-area diode structure improves (as compared to the total irradiation) the relationship been the reverse recovery time $(t_{rr})$ and energy loss in the conducting state $(U_f)$, while decreasing the temperature sensitivity of the reverse current $(I_R)$. It is established that the relationships between $t_{rr}$, $U_F$, and $I_R$ in locally irradiated structures depends on the experimental conditions (ERZ size).

Received: 14.04.2011

 English version: Technical Physics Letters, 2011, 37:9, 801–804

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