Abstract:
The influence of natural aging on the intensity and position of the photoluminescence (PL) peak in $n$-type porous silicon (por-Si) has been studied. Changes in the phase composition and relative content of the amorphous and oxide phases in por-Si during aging were determined by simulating the spectra of Si L$_{2,3}$ ultrasoft X-ray emission based on the reference spectra of the corresponding phases.
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