This article is cited in 3 papers

Specific features of gallium nitride selective epitaxy in round windows

V. V. Lundin, E. E. Zavarin, M. M. Rozhavskaya, S. I. Troshkov, A. F. Tsatsul'nikov

Ioffe Institute, St. Petersburg

Abstract: Specific features of gallium nitride (GaN) selective growth by MOVPE in round windows has been studied. It is established that a decrease in the flux of ammonia results in an increase in the lateral size of crystallites, while the minimum studied fluxes lead to a decrease in the height of crystallites and the formation of (0001) and $\{1\bar100\}$ facets in addition to the usual $\{1\bar101\}$ facets. The phenomenon of growth suppression was observed for a fraction of crystallites at the onset of their coalescence. In addition, selective growth was suppressed near large nonmasked surface regions.

Received: 08.04.2011

 English version: Technical Physics Letters, 2011, 37:8, 735–738

Bibliographic databases:

•