A. Lashkul, I. V. Pleshakov, N. V. Glebova, A. A. Nechitailov, Yu. I. Kuzmin, V. V. Matveev, E. N. Piatyshev, A. N. Kazakin, A. V. Gluhovskoi, “Investigation of composite structure of magnetically ordered material–semiconductor composite based on cobalt and porous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 37, Issue 14,Pages <nobr>40

This article is cited in 4 papers

Investigation of composite structure of magnetically ordered material–semiconductor composite based on cobalt and porous silicon

A. Lashkul^abcd, I. V. Pleshakov^bcd, N. V. Glebova^bcd, A. A. Nechitailov^bcd, Yu. I. Kuzmin^bcd, V. V. Matveev^bcd, E. N. Piatyshev^bcd, A. N. Kazakin^bcd, A. V. Gluhovskoi^bcd

^a Department of Mathematics and Physics, Lappeenranta Technical University, 53851, Lappeenranta, Finland
^b Saint Petersburg State University
^c Ioffe Institute, St. Petersburg
^d St. Petersburg Polytechnic University

Abstract: Preliminary data are reported concerning the character of magnetically ordered material particles formed in porous silicon matrix using a special chemical incorporation technology. According to this, the internal volume of a porous silicon matrix is filled with cobalt chloride, which is subsequently reduced to a magnetic phase by means of a chemical reaction with sodium tetraborohydride. The obtained composite samples have been studied by the methods of electron microscopy and magnetometry.

Received: 31.01.2011