V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, D. V. Shengurov, R. Kh. Zhukavin, M. N. Drozdov, “Boron doping of Si$_{1-x}$Ge$_x$/Si heterostructures grown by silicon sublimation in germane medium”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 37, Issue 13,Pages 24

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Boron doping of Si$_{1-x}$Ge$_x$/Si heterostructures grown by silicon sublimation in germane medium

V. G. Shengurov^ab, V. Yu. Chalkov^ab, S. A. Denisov^ab, D. V. Shengurov^ab, R. Kh. Zhukavin^ab, M. N. Drozdov^ab

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Controlled boron doping of Si$_{1-x}$Ge$_x$ epilayers has been achieved during low-temperature growth of SiGe/Si(100) heterostructures by sublimation of boron-doped silicon in a germane medium. Boron-doped single-crystalline silicon plate was sublimed by resistive heating to $\sim$1300$^\circ$C. Using this source, heterostructures with selectively doped layers, sharp dopant concentration profiles, and a maximum boron concentration of $\sim$1 $\times$ 10$^{19}$ cm$^{-3}$ were obtained.

Received: 31.01.2011