Abstract:
The structure and morphology characteristics of the surface of amorphous silicon (a-Si) condensates have been studied by the method of scanning electron microscopy (SEM). The SEM data revealed self-organization processes that lead to the formation of a-Si islands with similar shapes and sizes. A mathematical model is developed that partly explains the observed self-organization of island systems under the conditions of ultimately low supersaturations in the presence of an electric field at the growth surface and the deposition of ionized substance.
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