Abstract:
Dependence on the performance characteristics of a field-emission diode with tangential current takeoff from thin-film nanodiamond/graphite (NDG) emitter on the design parameters has been studied. Thin-film NDG emitter structures were formed in the plasma of microwave low-pressure gas discharge. Field-emission current densities up to 20 A/cm$^2$ at a voltage of 300 V were obtained. For the optimum diode design parameters, the tangential current takeoff scheme allows the threshold electric field strength for the onset of field emission to be decreased to less than half of the value typical of the planar field emission from the same NDG structures.
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