I. V. Grekhov, L. S. Kostina, V. V. Kozlovsky, V. N. Lomasov, A. V. Rozhkov, “Electron irradiation controlled profile of recombination center concentration in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 37, Issue 9,Pages <nobr>105

Electron irradiation controlled profile of recombination center concentration in silicon

I. V. Grekhov^ab, L. S. Kostina^ab, V. V. Kozlovsky^ab, V. N. Lomasov^ab, A. V. Rozhkov^ab

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Polytechnic University

Abstract: It is shown that the axial distribution of the recombination center concentration in high-voltage silicon $p^+Nn^+$ diodes can be controlled by electron irradiation in a certain energy range. Results of investigations of the main static and dynamic characteristics of electron-irradiated diodes are presented.

Received: 13.12.2010