This article is cited in 9 papers

Transistor structures with controlled potential profile in one-dimensional quantum channel

V. I. Borisov^ab, V. G. Lapin^ab, V. E. Sizov^ab, A. G. Temiryazev<sup>ab

a</sup> Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.

Abstract: Transistor structures with one-dimensional conducting channel and three-sectioned side control gates have been created based on GaAs/AlGaAs heterostructures with two-dimensional electron gas by means of local anode oxidation with the aid of a scanning probe microscope. It is demonstrated that gates in this structure allow the potential profile in the channel to be controlled. The measured dependences of the channel conductance on the gate voltage exhibit plateaus (including those not multiple of $2e^2/h$) and maxima, the positions of which are determined by the ratio of potentials applied to the gates.

Received: 23.06.2010

 English version: Technical Physics Letters, 2011, 37:2, 136–139

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