This article is cited in 9 papers

Features of CoSi$_2$ phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, S. G. Simakin

Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences

Abstract: A method of cobalt disilicide (CoSi$_2$) layer formation proceeding from a Ti(8 nm)/Co(10 nm)/Ti(5 nm)/Si(100) (substrate) structure prepared by magnetron sputtering is described. The initial structure was subjected to two-stage rapid thermal annealing (RTA) in nitrogen, and the samples after each stage were studied by the time-of-flight secondary-ion mass spectrometry, Auger electron spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The RTA-1 stage (550$^\circ$C, 45 s) resulted in the formation of a sacrificial surface layer of TiN$_x$O$_y$, which gettered residual impurities (O, C, N) from inner interfaces of the initial structure. After the chemical removal of this TiN$_x$O$_y$ layer, the enrichment with cobalt at the RTA-2 stage (830$^\circ$C, 25 s) led to the formation of a low-resistance CoSi$_2$ phase.

Received: 30.07.2010

 English version: Technical Physics Letters, 2011, 37:2, 112–115

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