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In situ observation of the relaxation of conductivity in $\gamma$-irradiated $n$-type silicon under the action of ultrasound pulses
Ya. M. Olikh,
N. D. Tymochko Institute of Semiconductor Physics NAS, Kiev
Abstract:
Reversible change of the electric conductivity
$\sigma_{\mathrm{US}}$ in a temperature range of
$T$ = 110–180 K has been observed for the first time in
$\gamma$-irradiated and partly annealed (280
$^\circ$C) floating-zone grown silicon (
$n$-Si–Fz) under the action of pulsed ultrasound (longitudinal wave) at a frequency of 6–10 MHz, intensity up to 4
$\times$ 10
$^3$ W/m
$^2$, and pulse duration within 10
$^{-5}$–10
$^{-3}$ s. It is established that the temperature dependences of the parameters of acoustic-wave-induced change of
$\sigma_{\mathrm{US}}$ (increase time,
$\tau_i$; decay time,
$\tau_d$) obey the Arrhenius law. Experimental
$\tau_{i,d}(T)$ curves have been used to determine the corresponding activation energies (
$E_i\approx$ 0.09 eV,
$E_d\approx$ 0.13 eV) and preexponential factors (
$\tau^0_i\approx$ 4
$\times$ 10
$^{-8}$ s,
$\tau^0_d\approx$ 10
$^{-9}$ s). The observed phenomenon is interpreted as an acoustic-wave-induced transition between the states of a metastable structural defect.
Received: 04.08.2010
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