Yu. N. Buzynin, M. E. Viktorov, A. V. Vodopyanov, S. V. Golubev, M. N. Drozdov, Yu. N. Drozdov, A. Yu. Luk'yanov, D. A. Mansfeld, E. V. Skorokhodov, O. I. Khrykin, V. I. Shashkin, “Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 24,Pages 86

This article is cited in 1 paper

Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

Yu. N. Buzynin^ab, M. E. Viktorov^ab, A. V. Vodopyanov^ab, S. V. Golubev^ab, M. N. Drozdov^ab, Yu. N. Drozdov^ab, A. Yu. Luk'yanov^ab, D. A. Mansfeld^ab, E. V. Skorokhodov^ab, O. I. Khrykin^ab, V. I. Shashkin^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: Hexagonal indium nitride (InN) films on (111)- and (100)-oriented yttria-stabilized zirconia (YSZ) substrates and (0001)-oriented Al$_2$O$_3$ substrates have been grown for the first time at a rate of 1 $\mu$m/h by the method of metalorganic vapor-phase epitaxy with plasma-assisted nitrogen activation in an electron cyclotron resonance discharge generated by gyrotron radiation at low-temperature (350$^\circ$C) growth. InN films grown without buffer layers possess a textured polycrystalline structure. Using an InN/GaN double buffer layer, single-crystalline InN films have been obtained on Al$_2$O$_3$(0001) substrates. Data on the morphology, structure, and photoluminescent properties of the obtained InN films are presented.

Received: 06.07.2012