S. P. Kobeleva, I. M. Anfimov, S. Yu. Yurchuk, E. A. Vygovskaya, B. V. Zhalnin, “Influence of In$_{0.56}$Ga$_{0.44}$P/Ge heterostructure on diffusion of phosphorus in germanium during the formation of multiple solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 24,Pages 33

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Influence of In$_{0.56}$Ga$_{0.44}$P/Ge heterostructure on diffusion of phosphorus in germanium during the formation of multiple solar cells

S. P. Kobeleva^ab, I. M. Anfimov^ab, S. Yu. Yurchuk^ab, E. A. Vygovskaya^ab, B. V. Zhalnin^ab

^a National University of Science and Technology «MISIS», Moscow
^b Research Institute "Kvant", Moscow

Abstract: Phosphorus profiles in germanium doped with gallium obtained within the formation of the first stage of a three-stage solar cell based on A$^3$B$^5$/Ge (Ga) have been studied. Secondary-ion mass spectroscopy has been applied to obtain profiles of phosphorus and gallium in germanium in flow of phosphine and in In$_{0.01}$Ga$_{0.99}$As/In$_{0.56}$Ga$_{0.44}$P/ Ge. It is observed that most of the phosphorus is supplied from In$_{0.56}$Ga$_{0.44}$P along with diffusion of gallium. The diffusion profiles of phosphorus in germanium have been calculated. It has been shown that diffusion of phosphorus from an In$_{0.56}$Ga$_{0.44}$P buffer layer, which is at the same time a source of gallium, depends on the coordinates, and, in order to describe this dependence, it is necessary to use mathematical models that take into account not only diffusion, but also the drift component of flow of phosphorus atoms.

Received: 07.08.2012