Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions

I. I. Izhnin^a, G. V. Savitskii^a, E. I. Fitsych^a, S. A. Dvoretskii^b, N. N. Mikhailov^b, V. S. Varavin^b, K. J. Mynbaev<sup>c

a</sup> Karat Scientific and Production Enterprise, L'vov
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Ioffe Institute, St. Petersburg

Abstract: We have studied the relaxation of electrical properties in radiation-damaged layers formed during ion-beam milling (IBM) of cadmium mercury telluride (CdHgTe) solid solutions. It is established that the initial concentration of donor centers formed due to radiation-induced defects and the dynamics of their decomposition in the course of aging (relaxation) are determined by the composition of the solid solution. The mobility of charge carriers in radiation-damaged CdHgTe layers upon relaxation also depends on the solid solution composition.

Received: 09.08.2012

 English version: Technical Physics Letters, 2013, 39:1, 16–19

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