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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012 Volume 38, Issue 22, Pages 87–94 (Mi pjtf9014)

A magnetically controlled LED with $S$-shaped current-voltage characteristic

A. V. Kudrinab, M. V. Dorokhinab, Yu. A. Danilovab

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod

Abstract: A $p$$i$$n$ light-emitting diode (LED) structure with InGaAs/GaAs quantum wells has been manufactured by combining the vapor phase epitaxy and laser ablation methods. The obtained heterostructures exhibit a negative differential resistance and the magnetodiode effect at 77 K. The proposed LED structure admits (i) switching from the low- to high-resistance state by applied pulsed bias voltage and (ii) electroluminescence quenching by external magnetic field.

Received: 04.08.2012


 English version:
Technical Physics Letters, 2012, 38:11, 1045–1047

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