This article is cited in 2 papers

Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters

S. A. Blokhin^ab, A. M. Nadtochiy^ab, S. A. Mintairov^ab, N. A. Kalyuzhnyy^ab, V. M. Emelyanov^ab, V. N. Nevedomskiy^ab, M. Z. Shvarts^ab, M. V. Maksimov^ab, V. M. Lantratov^ab, N. N. Ledentsov^ab, V. M. Ustinov<sup>ab

a</sup> Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg Academic University, St. Petersburg, 195220, Russia
^b Ioffe Institute, St. Petersburg

Abstract: Results of a comparative study of the internal quantum yield of AlGaAs/GaAs photovoltaic converters (PVCs) with variable position of the array of vertically coupled InGaAs quantum dots (QDs) are presented. It is established that the QD array placed immediately at the $i$-region/base interface does not change the PVC sensitivity compared to that for QDs arranged inside the $i$-region of the $p$–$n$ junction. However, the QD array shifted to the base or the back potential barrier decreases the contribution of a base layer to the PVC photocurrent and reduces the photosensitivity of the QD-based medium.

Received: 25.05.2012

 English version: Technical Physics Letters, 2012, 38:11, 1024–1026

Bibliographic databases:

•