This article is cited in 3 papers

Signal amplification under stochastic resonance in vanadium dioxide film

V. Sh. Aliev, S. G. Bortnikov, M. A. Dem'yanenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The phenomenon of stochastic resonance with an input signal gain of 1.6 times was observed in the planar structure that is connected in series with the loading resistor and has a VO$_2$ conducting channel. It was shown that the signal-to-noise ratio transferring in the circuit can reach 250 times.

Received: 18.04.2012

 English version: Technical Physics Letters, 2012, 38:11, 965–968

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