This article is cited in 2 papers

Annealing of radiation-compensated silicon carbide

A. A. Lebedev^ab, E. V. Bogdanova^ab, M. V. Grigor'eva^ab, S. P. Lebedev^ab, V. V. Kozlovsky<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b Saint-Petersburg State Polytechnical University

Abstract: This Letter is devoted to investigation of conductivity reduction in radiation-compensated epitaxial layers of various polytypes of silicon carbide of $p$-type conduction. It is shown that radiation-induced compensation of SiC is retained after annealing $\le$ 1000$^\circ$C. The almost complete conductivity reduction occurs at $T\ge$ 1200$^\circ$C. This character of annealing of the radiation compensation is independent of silicon carbide polytype and the starting doping level of the epitaxial layer. The found temperatures of complete annealing considerably exceed working temperatures of SiC-based devices.

Received: 03.05.2012

 English version: Technical Physics Letters, 2012, 38:10, 910–912

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