Features of changes in electrical parameters of silicon $p$–$n$ structures upon high-temperature electron irradiation

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov

Abstract: The effect of the temperature mode of 4-MeV electron irradiation on the change in the basic electrophysical characteristics of silicon diffused $p^+$–$n$–$n^+$ structures has been studied. It has been shown that the temperature of the crystal and integrated intensity during irradiation have a significant effect on the parameters of formation of radiation defects and the pattern of their distribution in different regions of silicon $p^+$–$n$–$n^+$ structures.

Received: 29.05.2012

 English version: Technical Physics Letters, 2012, 38:10, 904–906

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