AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds

V. I. Vasil’ev^ab, G. S. Gagis^ab, R. V. Levin^ab, B. V. Pushnii^ab, A. G. Deryagin^ab, V. I. Kuchinskii^ab, M. N. Mizerov<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: Epitaxial growth of Al$_u$Ga$_{1-u-x}$In$_x$As$_y$Sb$_{1-y}$ and Al$_u$Ca$_{1-u}$As$_y$Sb$_{1-y}$ solid solutions has been investigated. Epitaxial layers with the compositions 0.02 $< u <$ 0.11, 0.88 $< x <$ 0.93, and 0.88 $< y <$ 0.98 have been grown on InAs substrates by metal-organic vapor-phase epitaxy at low pressure (76 Torr) and at the ratio of the sum of partial pressures of compounds of fifth-group elements to that for compounds of third-group elements V/III = 3.6–6. At a lattice mismatch of 1 $\times$ 10$^{-3}$, the half-widths of the rocking curves for the best samples were 15 arcsec for substrates and 66 arcsec for layers.

Received: 27.05.2012

 English version: Technical Physics Letters, 2012, 38:10, 900–903

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