Abstract:
This Letter is devoted to an experimental investigation of the temperature dependence of the fundamental absorption edge of thin GaAs layers grown by molecular beam epitaxy. Critical temperature $T_c$ = 135 K, above which the integral absorption becomes constant, corresponding values of critical damping parameter $\Gamma_c$ = 0.248 meV, and longitudinal-transverse splitting $\hbar\omega_{\mathrm{LT}}$ = 0.082 meV are determined experimentally. The temperature dependence of the true dissipative damping is separated.
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