The threshold of nanopore formation in ion-implanted platinum

V. A. Ivchenko<sup>ab

a</sup> Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^b Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg

Abstract: The method of field-ion microscopy was used to determine the threshold of nanopore formation in ion-implanted platinum. The threshold for ion-implanted platinum corresponds to fluence $F$ = 10$^{17}$ ions/cm$^2$. The size of nanopores is determined: 1–5 nm (transverse) and 1–9 nm (lateral, across the target depth). It is found that up to 40% of nanopores are located in the subsurface layer with a thickness of 10 nm. The obtained results can be used for prediction of radiation stability of materials based on fcc metals.

Received: 13.04.2012

 English version: Technical Physics Letters, 2012, 38:9, 822–824

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