This article is cited in 3 papers

Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100)

A. D. Bouravlev^abc, G. O. Abdrashitov^abc, G. È. Cirlin<sup>abc

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: Arrays of (Ga,Mn)As crystal nanowires on a GaAs (100) substrate were first obtained using molecular-beam epitaxy at 485$^\circ$C. From the diffraction patterns of the reflected fast electrons, it was found that crystal nanowires are formed in this system in a cubic crystallographic phase.

Received: 25.04.2012

 English version: Technical Physics Letters, 2012, 38:9, 816–818

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