This article is cited in 15 papers

A study of vacuum-ultraviolet stability of silicon photodiodes

V. V. Zabrodskii, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko, V. L. Sukhanov

Ioffe Institute, St. Petersburg

Abstract: Silicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the $p$–$n$ and $n$–$p$ photodiodes under study were found to degrade by tens of percent at a VUV radiation dose on the order of tens of mJ/cm$^2$. The effect of reversible photocurrent relaxation has been observed in detectors based on $n$–$p$ structures.

Received: 16.04.2012

 English version: Technical Physics Letters, 2012, 38:9, 812–815

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