Low-temperature properties of porous silicon-indium nanocomposite

L. M. Sorokin, A. V. Fokin, A. E. Kalmykov, A. V. Chernyaev

Ioffe Institute, St. Petersburg

Abstract: A new nanocomposite material with stable properties has been obtained representing a metal (indium) incorporated into a semiconducting porous silicon (por-Si) matrix. Electrical properties of the por-Si-In nanocomposite have been studied for the first time. At low temperatures ($T$ = 1.4–4.2 K), the por-Si-In samples exhibit a positive magnetoresistance [$\Delta R/R(H=0)\approx$ 600%], which is related to breakage of the superconducting state of In particles in the por-Si matrix.

Received: 20.02.2012

 English version: Technical Physics Letters, 2012, 38:9, 789–792

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