G. S. Sokolovskii, V. V. Dyudelev, A. G. Deryagin, V. I. Kuchinskii, “Effect of gain saturation on the current-power characteristic of semiconductor laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 13,Pages <nobr>35

This article is cited in 2 papers

Effect of gain saturation on the current-power characteristic of semiconductor laser

G. S. Sokolovskii, V. V. Dyudelev, A. G. Deryagin, V. I. Kuchinskii

Ioffe Institute, St. Petersburg

Abstract: It is shown that, when temperature effects are excluded, even a small bend of the current-power characteristic of a semiconductor laser caused by gain saturation indicates that the carrier concentration that is necessary to maintain lasing should be increased by several times (i.e., that the effective lasing threshold significantly increases).

Received: 06.02.2012