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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012 Volume 38, Issue 12, Pages 45–52 (Mi pjtf8884)

This article is cited in 1 paper

Creating micron regions with modified luminescent properties and topology on CdS$_x$Se$_{1-x}$ films by laser annealing

D. N. Bratashov, S. A. Klimova, A. A. Serdobintsev, I. V. Malyar, S. V. Stetsyura

Saratov State University

Abstract: Laser annealing of thin polycrystalline films of CdS$_x$Se$_{1-x}$ solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharply modified physical properties on a micron-precise scale makes the proposed technique a promising tool for the production of semi-conductor sensor chips.

Received: 20.02.2012


 English version:
Technical Physics Letters, 2012, 38:6, 572–575

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