Z. Z. Alisultanov, R. P. Meylanov, A. K. Nukhov, G. M. Musaev, E. I. Idayatov, “Electron states in the quantum dot-graphene-monolayer-SiO$_2$+$n^+$Si-substrate system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 12,Pages 1

This article is cited in 8 papers

Electron states in the quantum dot-graphene-monolayer-SiO$_2$+$n^+$Si-substrate system

Z. Z. Alisultanov^abc, R. P. Meylanov^abc, A. K. Nukhov^abc, G. M. Musaev^abc, E. I. Idayatov^abc

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Institute of Geothermy Problems, Makhachkala
^c Daghestan State University, Makhachkala

Abstract: Electron states of the quantum dot–graphene–monolayer–SiO$_2$+$n^+$Si-substrate system have been studied. An analytical expression for charge transfer in this system has been derived. Using this system, it is possible to control the optical properties of the quantum dot by means of an applied electric field.

Received: 20.02.2012