O. F. Butyagin, N. I. Katsavets, I. V. Kogan, D. M. Krasovitsky, V. B. Kulikov, V. P. Chalyi, A. L. Dudin, O. B. Cherednichenko, “AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 <nobr>$\mu$</nobr>m) IR photodetectors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 9,Pages <nobr>81

This article is cited in 3 papers

AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 $\mu$m) IR photodetectors

O. F. Butyagin^ab, N. I. Katsavets^ab, I. V. Kogan^ab, D. M. Krasovitsky^ab, V. B. Kulikov^ab, V. P. Chalyi^ab, A. L. Dudin^ab, O. B. Cherednichenko^ab

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b ZAO Svetlana-Rost, St. Petersburg

Abstract: We have studied AlGaAs/GaAs multiquantum-well heterostructures grown by molecular beam epitaxy in an STE-3532 setup (SemiTEq, St. Petersburg), which are intended for long-wavelength IR photodetectors operating on inter-subband transitions. Quantum wells (QWs) in the obtained heterostructures are highly homogeneous and possess sharp heteroboundaries, which is confirmed by the photoluminescence spectra and dark current-voltage characteristics of photodetectors based on these heterostructures. The photodetectors exhibit sensitivity in the atmospheric transparency window (8–10 mm) and possess parameters that make possible their use in large-format photodetector arrays for a new generation of long-wavelength IR camera systems.

Received: 12.09.2011