This article is cited in 4 papers

Growing high-quality Bi$_{12}$SiO$_{20}$ crystals of large diameter (85 mm)

D. S. Pantsurkin^a, V. N. Shlegel'^a, V. M. Mamedov^b, M. G. Vasil'ev^b, V. S. Yuferev<sup>b

a</sup> Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
^b Ioffe Institute, St. Petersburg

Abstract: Conditions that ensure reproducible growth of $\langle$110$\rangle$-oriented perfect Bi$_{12}$SiO$_{20}$ (BSO) crystals by the low-thermal-gradient Czochralski technique, whereby the entire crystallization front is occupied by the (110) crystal face, have been determined with the aid of numerical simulations. Using the established regime, BSO crystals have been obtained with a diameter of 85 mm, a length of 200 mm, and a mass of 10 kg. The density of dislocations in the crystals does not exceed 10 cm$^{-2}$, and the refractive index inhomogeneity is below 10$^{-3}$.

Received: 06.12.2011

 English version: Technical Physics Letters, 2012, 38:5, 432–435

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