M. G. Mynbaeva, A. E. Nikolaev, A. A. Sitnikova, R. V. Zolotareva, K. J. Mynbaev, “Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 9,Pages <nobr>31

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Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates

M. G. Mynbaeva^ab, A. E. Nikolaev^ab, A. A. Sitnikova^ab, R. V. Zolotareva^ab, K. J. Mynbaev^ab

^a Ioffe Institute, St. Petersburg
^b Perfect Crystals LLC, Saint-Petersburg

Abstract: Results of experiments on the homoepitaxial growth of gallium nitride (GaN) on porous GaN substrates with nanostructured volume are reported. A mechanism that can be used to exclude the dislocations of substrate from the sources of threading dislocations in homoepitaxial layers is described for the first time.

Received: 26.12.2011