This article is cited in 3 papers

Charge carrier lifetime recovery in $\gamma$-irradiated silicon under the action of ultrasound

A. A. Podolyan, A. B. Nadtochii, O. A. Korotchenkov

National Taras Shevchenko University of Kyiv

Abstract: Ultrasonic treatment of $\gamma$-irradiated silicon can lead to a significant (up to about 70%) recovery of the minority carrier lifetime reduced by the irradiation. A mechanism of the ultrasound-induced recovery is proposed, which is based on the release of vacancies from $E$-type centers followed by their trapping on defect sinks. It is suggested that the role of defect sinks can be played by $A$-type microdefects.

Received: 31.10.2011

 English version: Technical Physics Letters, 2012, 38:5, 405–408

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