Yu. V. Zhilyaev, D. I. Mikulik, A. V. Nasonov, A. Orlova, V. N. Panteleev, N. K. Poletaev, L. M. Fedorov, M. P. Scheglov, “GaAs $p$–$i$–$n$ structures for X-ray detectors grown on Ge and GaAs substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 9,Pages 1

This article is cited in 3 papers

GaAs $p$–$i$–$n$ structures for X-ray detectors grown on Ge and GaAs substrates

Yu. V. Zhilyaev, D. I. Mikulik, A. V. Nasonov, A. Orlova, V. N. Panteleev, N. K. Poletaev, L. M. Fedorov, M. P. Scheglov

Ioffe Institute, St. Petersburg

Abstract: Features of the creation of gallium arsenide (GaAs) $p$–$i$–$n$ structures on germanium substrates are considered. Optimum regimes for growth of thick GaAs layers by hydride-chloride vapor phase epitaxy (HVPE) on Ge substrates are established, which allow high-quality $p$–$i$–$n$ structures with characteristics close to those reached by homoepitaxy to be obtained. The spectra of exciton photoluminescence have been measured for ultrahigh-purity GaAs layers of various thicknesses grown under differing HVPE conditions.

Received: 14.11.2011