This article is cited in 1 paper

Calculating GaAs semiconductor nanoneedle size distribution

A. D. Bolshakov^a, V. G. Dubrovskii<sup>b

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg

Abstract: The temporal evolution of an ensemble of semiconductor (GaAs) nanoneedles (NNs) growing on a lattice-mismatched substrate (silicon, sapphire) has been theoretically analyzed assuming the validity of the Gaussian law of nucleation and constancy of the NN shape during growth. The NN size distribution function is determined for various moments of time. The results of analysis can be used for optimization of growth methods aimed at obtaining NN ensembles with preset morphology.

Received: 04.12.2011

 English version: Technical Physics Letters, 2012, 38:4, 358–360

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