This article is cited in 3 papers

The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence

M. S. Buyalo^abc, A. A. Gorbatsevich^abc, A. Yu. Egorov^abc, I. M. Gadzhiev^abc, I. O. Bakshaev^abc, Yu. M. Zadiranov^abc, N. D. Il'inskaya^abc, E. L. Portnoĭ<sup>abc

a</sup> Ioffe Institute, St. Petersburg
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)

Abstract: Semiconductor two-sectional laser diodes with active region, consisting of two InGaAs quantum wells of different width separated with GaAs barrier are investigated. At barrier thickness of 2 nm quantum wells are coupled and diagonal optical transition originates between them. Peak in absorption spectra of lasing structure related to this diagonal transition is observed. An additional region of passive mode-locking due to this absorption peak takes place at low reverse biases on absorber section.

Received: 17.11.2011

 English version: Technical Physics Letters, 2012, 38:4, 316–319

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