S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, V. V. Lundin, M. A. Sinicin, M. M. Rozhavskaya, A. F. Tsatsul'nikov, S. I. Troshkov, N. A. Feoktistov, “Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 6,Pages <nobr>90

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Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

S. A. Kukushkin^ab, A. V. Osipov^ab, S. G. Zhukov^ab, E. E. Zavarin^ab, V. V. Lundin^ab, M. A. Sinicin^ab, M. M. Rozhavskaya^ab, A. F. Tsatsul'nikov^ab, S. I. Troshkov^ab, N. A. Feoktistov^ab

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low ($<$ 10$^8$ cm$^{-2}$) density of lattice misfit dislocations at a total dislocation density of $\sim$8 $\times$ 10$^8$ cm$^{-2}$. The photo- and electroluminescence spectra of obtained structures have been measured.

Received: 15.11.2011