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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012 Volume 38, Issue 6, Pages 77–82 (Mi pjtf8806)

This article is cited in 3 papers

Composition and submicron structure of chemically deposited Cu$_2$Se–In$_2$Se$_3$ films

V. F. Markovabc, S. S. Tuleninabc, L. N. Maskaevaabc, M. V. Kuznetsovabc, N. M. Barbinabc

a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
c Ural Institute of the State Fire Service

Abstract: Films of substitutional solid solutions of the Cu$_2$Se–In$_2$Se$_3$ system containing up to 7.5 at.% In have been obtained by chemical deposition from aqueous media. The composition, structure, and morphology of the films have been studied. Data of X-ray diffraction and X-ray photoelectron spectroscopy showed that copper in the solid solution occurs in a single-valence state (Cu$^+$). The deposited layers possess a globular morphology and are nanostructured.

Received: 07.11.2011


 English version:
Technical Physics Letters, 2012, 38:3, 290–293

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