This article is cited in 1 paper

Double-cross epitaxial overgrowth of nonpolar gallium nitride layers

V. V. Lundin, E. E. Zavarin, M. M. Rozhavskaya, A. E. Nikolaev, A. V. Sakharov, S. I. Troshkov, M. A. Sinicin, D. V. Davydov, M. M. Kulagina, P. N. Brunkov, A. F. Tsatsul'nikov

Ioffe Institute, St. Petersburg

Abstract: Epitaxial gallium nitride (GaN) structures have been manufactured by the lateral overgrowth technology, whereby GaN epilayers are grown in stripe windows on a partly masked initial GaN layer. It is established that in addition to the traditional orientation of stripes across the c axis, the process is also possible for the stripes oriented at 45$^\circ$ relative to this axis. In this case, two lateral overgrowth processes in mutually perpendicular directions can be performed, which would significantly reduce the relative area of imperfect material formed over windows in the mask.

Received: 14.11.2011

 English version: Technical Physics Letters, 2012, 38:3, 265–267

Bibliographic databases:

•