P. I. Khadzhi, I. V. Belousov, A. V. Corovai, D. A. Markov, “Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 6,Pages <nobr>15

This article is cited in 2 papers

Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors

P. I. Khadzhi^a, I. V. Belousov^a, A. V. Corovai^b, D. A. Markov^b

^a Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
^b Taras Shevchenko Transnistria State University, Tiraspol

Abstract: A new mechanism of the generation (amplification) of terahertz radiation in semiconductors is proposed, which is based on the quantum transitions between two-exciton and biexciton under conditions of single-photon excitation from the ground state of a crystal.

Received: 01.11.2011