N. D. Il'inskaya, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus, “Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 5,Pages 85

This article is cited in 2 papers

Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m

N. D. Il'inskaya, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus

Ioffe Institute, St. Petersburg

Abstract: We have experimentally studied the parameters of room-temperature photodiodes based on gradient solid solutions of the InAsSb(P) system, having a long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m and various geometries of non-transparent contacts on the exposed $p$-InAsSb(P) surface. It is established that the sensitivity (photocurrent collection efficiency) strongly depends on the perimeter of this contact: photodiodes with net structure of this contact (increased perimeter and area) are characterized by increased sensitivity even despite greater degree of shadowing of the exposed surface by the contact.

Received: 05.10.2011