Abstract:
The temperature dependence of the fundamental absorption edge in free-standing “epitaxial” InP layers has been experimentally studied. The integral exciton absorption coefficient $K(T)$ exhibits an increase at low temperatures, which is explained in terms of the exciton-polariton mechanism of light transfer in semi-conductor crystals with spatial dispersion. A critical temperature ($T_c$ = 200 K), above which the integral absorption becomes constant, has been experimentally determined, and the corresponding critical decay parameter ($\Gamma_c$ = 0.341 meV), longitudinal-transverse splitting ($\hbar\omega_{LT}$ = 0.175 meV), and oscillator strength of the exciton transition ($\beta$ = 0.237 $\times$ 10$^{-4}$) have been calculated. The temperature dependence of the true dissipative decay has been determined.
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