This article is cited in 14 papers

Injection photodiode based on $p$-CdTe film

Sh. A. Mirsagatov^ab, A. K. Uteniyazov<sup>ab

a</sup> Physical-Technical Institute, Uzbekistan Academy of Sciences
^b Karakalpak State University named after Berdakh

Abstract: Photosensitive large-block $p$-type cadmium telluride ($p$-CdTe) film with a resistivity of $\rho\sim$ 10$^6$–10$^7$ $\Omega$ $\cdot$ cm has been used to create an Al-$p$-CdTe-Mo structure with a Schottky barrier, which exhibits the properties of an injection photodiode. Being switched in the forward current passage direction (with “+” on the Mo contact) at high illumination levels, the proposed structure exhibits a responsivity of $S_\lambda\approx$ 2.6 A/W at a wavelength of $\lambda$ = 0.625 $\mu$m, which is about five times the spectral response of the ideal photodetector for this wavelength range.

Received: 05.07.2011

 English version: Technical Physics Letters, 2012, 38:1, 34–37

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