O. E. Tereshchenko, A. G. Paulish, M. A. Neklyudova, T. S. Shamirzaev, A. S. Yaroshevich, I. P. Prosvirin, I. E. Zhaksylykova, D. V. Dmitriev, A. I. Toropov, S. N. Varnakov, M. V. Rautskii, N. V. Volkov, S. G. Ovchinnikov, A. V. Latyshev, “Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 1,Pages <nobr>27

This article is cited in 2 papers

Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin

O. E. Tereshchenko^a, A. G. Paulish^a, M. A. Neklyudova^a, T. S. Shamirzaev^a, A. S. Yaroshevich^a, I. P. Prosvirin^b, I. E. Zhaksylykova^a, D. V. Dmitriev^a, A. I. Toropov^a, S. N. Varnakov^c, M. V. Rautskii^c, N. V. Volkov^cd, S. G. Ovchinnikov^c, A. V. Latyshev^ae

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Boreskov Institute of Catalysis SB RAS, Novosibirsk
^c L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^d M. F. Reshetnev Siberian State Aerospace University,
^e Novosibirsk State University

Abstract: Conditions necessary for the formation of a Fe/GaAs interface have been established and the electrical, magnetic, and optical properties of Pd/Fe/GaAs heterostructures with InGaAs quantum wells have been studied. The possibility of obtaining an epitaxial layer of Fe on GaAs(001) surface at room temperature is demonstrated. The magnetization curve of Fe layer exhibits hysteresis with an easy axis in plane of the sample. Iron exhibits surface segregation by diffusion through a 4-nm-thick Pd layer. The properties of obtained Pd/Fe/GaAs/InGaAs structures show evidence for their possible use in optical detectors of free-electron spin.

Received: 26.07.2011