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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2026 Volume 52, Issue 1, Pages 36–40 (Mi pjtf8720)

Direct current modulation of high-power semiconductor lasers by high-frequency limit-cycle in gallium arsenide avalanche diodes

A. V. Rozhkov, P. B. Rodin

Ioffe Institute, St. Petersburg

Abstract: High-frequency limit-cycle oscillations generated by reversely biased high-voltage diode operated in simplistic electrical ciucuit are applied for the direct current modulation of power semiconductor laser. Oscillation frequency is 2–2,4 GHz. The avalanche diode is connected by means of a strip line in-series with hetero-laser equipped by tunnel-connected emitters and 50$\Omega$ load. It has been observed that oscillations of the laser current and oscillations of the photodetector signal have the same frequency. The peak power of optical signal $P_m$ at the maximum laser current $\sim$2,0 A was $P_m\approx$ 5,5 W for the half-width duration of the optical pulse $\sim$180 ps.

Received: 02.07.2025
Revised: 01.09.2025
Accepted: 01.09.2025

DOI: 10.61011/PJTF.2026.01.61919.20424



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© Steklov Math. Inst. of RAS, 2026