Approach for obtaining Ge/Si(001) self-assembled hut wires for hole spin qubits

D. V. Yurasov, M. V. Shaleev, A. V. Novikov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Method for fabrication of self-assembled Ge hut wires on Si(001) by molecular beam epitaxy is proposed. The approach is based on deposition of different amounts of Ge in two zones of a Si substrate and control of the surface morphology of one of the zones by reflection high-energy electron diffraction. It allows the deposition of a certain amount of Ge being arbitrarily close to the critical thickness of pseudomorphic growth in the second zone. Along with the optimized parameters of post-growth annealing, this allowed forming Ge hut wires with different parameters. Ge wires longer than 0.5 $\mu$m with low surface density were obtained, which are suitable for fabrication of hole spin qubits.

Keywords: SiGe heterostructures, molecular beam epitaxy, self-assembled islands, Ge hut wires.

Received: 04.07.2025
Revised: 08.08.2025
Accepted: 12.08.2025

DOI: 10.61011/PJTF.2025.22.61578.20431

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