This article is cited in 18 papers

Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures

A. I. Baranov, A. S. Gudovskikh, E. V. Nikitina, A. Yu. Egorov

St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)

Abstract: It is shown that photovoltaic converters (PVCs) can be based on GaPNAs/GaP heterostructures, which are of considerable interest for the creation of multijunction solar cells on silicon substrates. It is established that $p$–$i$–$n$ structures with undoped GaPNAs layer provide for a more effective separation of charge carriers, which makes it possible to obtain a greater short-circuit current than that in $p$–$n$ structures with an $n$-type base. A specific feature in spectral characteristics of the proposed PVCs is the presence of two peaks in the spectra of quantum efficiency, which is related to a complicated band structure of GaPNAs.

Received: 28.08.2013

 English version: Technical Physics Letters, 2013, 39:12, 1117–1120

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